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? auirf7103q v dss 50v r ds(on) max. 130m ?? i d 3.0a description specifically designed for automoti ve applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achiev e low on-resistan ce per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. features ? advanced planar technology ? dual n channel mosfet ? low on-resistance ? logic level gate drive ? dynamic dv/dt rating ? 175c operating temperature ? fast switching ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * 1 2015-9-30 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t a = 25c continuous drain current, v gs @ 4.5v 3.0 a i d @ t a = 70c continuous drain current, v gs @ 4.5v 2.5 i dm pulsed drain current ? 25 p d @t a = 25c maximum power dissipation ? 2.4 w linear derating factor 16 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 22 mj i ar avalanche current ? see fig.19,20, 16b, 16c a e ar repetitive avalanche energy ? mj dv/dt peak diode recovery dv/dt ? 12 v/ns t j operating junction and -55 to + 175 t stg storage temperature range c ? absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units c/w r ? jl junction-to-drain lead ??? 20 r ? ja junction-to-ambient ?? ??? 62.5 so-8 auirf7103q base part number package type standard pack orderable part number form quantity auirf7103q so-8 tape and reel 4000 AUIRF7103QTR g d s gate drain source d1 d1 d 2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7
? auirf7103q 2 2015-9-30 notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? pulse width ?? 400s; duty cycle ? 2%. ? surface mounted on 1" in square cu board. ? starting t j = 25c, l = 4.9mh, r g = 25 ? , i as = 3.0a. (see fig. 12) ?? i sd ?? 2.0a, di/dt ?? 155a/s, v dd ?? v (br)dss , t j ? 175c. ? limited by t jmax , see fig.16b, 16c, 19, 20 for typica l repetitive avalanche performance. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 50 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.057 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 130 m ???? v gs = 10v, i d = 3.0a ?? ??? ??? 200 v gs = 4.5v, i d = 1.5a ?? v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250a gfs forward trans conductance 3.4 ??? ??? s v ds = 15v, i d = 3.0a i dss drain-to-source leakage current ??? ??? 2.0 a v ds =40v, v gs = 0v ??? ??? 25 v ds = 40v,v gs = 0v,t j =55c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 10 15 nc ? i d = 2.0a q gs gate-to-source charge ??? 1.2 ??? v ds = 40v q gd gate-to-drain charge ??? 2.8 ??? v gs = 10v t d(on) turn-on delay time ??? 5.1 ??? ns v dd = 25v t r rise time ??? 1.7 ??? i d = 1.0a t d(off) turn-off delay time ??? 15 ??? r g = 6.0 ?? t f fall time ??? 2.3 ??? r d = 25 ?? ? c iss input capacitance ??? 255 ??? pf ? v gs = 0v c oss output capacitance ??? 69 ??? v ds = 25v c rss reverse transfer capacitance ??? 29 ??? ? = 1.0mhz diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 3.0 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 12 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c,i s = 1.5a,v gs = 0v ?? t rr reverse recovery time ??? 35 53 ns t j = 25c ,i f = 1.5a, q rr reverse recovery charge ??? 45 67 nc di/dt = 100a/s ??? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d )
? auirf7103q 3 2015-9-30 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 25c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 3.0 6.0 9.0 12.0 15.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) t j = 25c t j = 175c v ds = 25v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 3.0a
? auirf7103q 4 2015-9-30 fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 3 6 9 12 0 3 6 9 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 2.0a v = 10v ds v = 25v ds v = 40v ds 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
? auirf7103q 5 2015-9-30 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms 25 50 75 100 125 150 175 0.0 0.6 1.2 1.8 2.4 3.0 t , case temperature ( c) i , drain current (a) c d 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a
? auirf7103q 6 2015-9-30 fig 12. typical on-resistance vs. gate voltage fig 13. typical on-resistance vs. drain current fig 15. typical power vs. time fig. 14. typical threshold voltage vs. junction temperature 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 -v gs, gate -to -source voltage (v) 0.09 0.10 0.11 0.12 0.13 0.14 0.15 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 3.0a 0 5 10 15 20 25 30 35 40 i d , drain current (a) 0.000 0.500 1.000 1.500 2.000 2.500 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v v gs = 4.5v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.3 1.5 1.8 2.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 1.00 10.00 100.00 1000.00 time (sec) 0 10 20 30 40 50 60 70 p o w e r ( w )
? auirf7103q 7 2015-9-30 ? fig 16a. maximum avalanche energy vs. drain current fig 17. gate charge test circuit fig 18. basic gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 16b. unclamped inductive test circuit t p v (br)dss i as fig 16c. unclamped inductive waveforms 25 50 75 100 125 150 175 0 12 24 36 48 60 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.2a 2.5a 3.0a
? auirf7103q 8 2015-9-30 ? fig 19. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 19, 20: (for further info, see an-1005 at www.infineon.com ) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16b, 16c. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 11, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 11) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 20. maximum avalanche energy vs. temperature 1.0e-08 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 tav (sec) 0.01 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 0.10 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 5 10 15 20 25 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 3.0a
? auirf7103q 9 2015-9-30 ? so-8 part marking information so-8 package outline (dimensions are shown in millimeters (inches) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 basic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters in c h es min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c ab e1 a a1 8x b c 0.10 [.004] 43 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. outline conforms to jedec outline ms-012aa. n o tes: 1. d im en sio n in g & to leran c in g per asm e y14.5m -1994. 2. controlling dim ension: millimeter 3. dimensions are shown in millimeters [inches]. 5 d im en sio n d o es n o t in c lu d e m o ld pro tru sio n s. 6 d im en sio n d o es n o t in c lu d e m o ld pro tru sio n s. m o ld pro tru sio n s n o t to exc eed 0.25 [.010]. 7 d im en sio n is th e len g th o f lead fo r so ld erin g to a s u b s t r a t e . m o ld pro tru sio n s n o t to exc eed 0.15 [.006]. 8x 1.78 [.070]
? auirf7103q 10 2015-9-30 so-8 tape and reel ( dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541.
? auirf7103q 11 2015-9-30 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level so-8 msl1 esd machine model class m1a (+/- 50v) ? aec-q101-002 human body model ? class h0 (+/- 250v) ? aec-q101-001 charged device model class c5 (+/- 1125v) ? aec-q101-005 rohs compliant yes published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 9/30/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. 4/3/2014 ?? added "logic level gate drive" bullet in the features section on page 1 ?? updated data sheet with new ir corporate template ? highest passing voltage.

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